| PART |
Description |
Maker |
| MRF6S21100HR3 MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
Freescale Semiconductor, Inc
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| FDMA1032CZ FDMA1032CZ08 |
20V Complementary PowerTrench? MOSFE
20V Complementary PowerTrench㈢ MOSFE
|
Fairchild Semiconductor
|
| MRF8P20140WGHSR3 MRF8P20140WH MRF8P20140WHR3 MRF8P |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21S260-12S A2T21S260-12SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21H450W19S A2T21H450W19SR6 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21H100-25S A2T21H100-25SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T18S260-12S A2T18S260-12SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT09H310-03S |
N-Channel Enhancement-Mode Lateral MOSFETs
|
NXP Semiconductors
|
| AFT09S200W02N AFT09S200W02GNR3 AFT09S200W02NR3 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| MRF6V2300N |
N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强型MOSFET的外
|
飞思卡尔半导体(中国)有限公司
|
