| PART |
Description |
Maker |
| NAP-21A |
NAP-21A / 21AS
|
ETC
|
| FDPF320N06L |
N-Channel PowerTrench? MOSFET 60V, 21A, 25mΩ
|
Fairchild Semiconductor
|
| IRF3315S IRF3315L |
Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
|
IRF[International Rectifier]
|
| IRFP152FI |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 21A条（丁）|18VAR
|
Maxwell Technologies, Inc
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 521Y-481103A |
RF COAXIAL RELAY, SPDT, LATCHED, 0.21A (COIL), 24VDC (COIL), 5040mW (COIL), 40000MHz, 15W (RF INPUT), PANEL MOUNT
|
DOW-KEY MICROWAVE CORP
|
| APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
| APT10050LVR 10050LVR |
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6030BVR APT6030 |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| BUZ21L BUZ21LE3045 |
N-Channel SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| IRFIZ34N IRFIZ34NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
|
IRF[International Rectifier]
|
| IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 21A条（丁）|18VAR
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五（巴西）直| 18A条（丁）|
|
IXYS, Corp.
|
