| PART |
Description |
Maker |
| GP801DDM18 |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
|
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| PBSS5140S PBSS4140S_1 PBSS4140S |
40 V low VCEsat PNP transistor
From old datasheet system
40 V low VCEsat NPN transistor
|
NXP Semiconductors
Philips Semiconductors
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PBSS5520X PBSS5520X-15 |
20 V, 5 A PNP low VCEsat (BISS) transistor 20伏，5安PNP型低饱和压降BISS）晶体管
20 V, 5 A PNP low VCEsat (BISS) transistor
PNP low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| GA150KS61U |
Low Side Switch Chopper Module Ultra-Fast Speed IGBT
|
International Rectifier
|
| IRG7PK35UD1-EPBF |
1400V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| SGS6N60UFD SGS6N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
| IRG4BC30UDPBF IRG4BC30UDPBF-15 |
23 A, 600 V, N-CHANNEL IGBT, TO-220AB
ULTRA FAST COPACK IGBT
|
International Rectifier
|
| SGP13N60UFD SGP13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
| SGS13N60UFD SGS13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
