| PART |
Description |
Maker |
| HYE18P16161ACL85 HYE18P16161AC HYE18P16161AC-70 HY |
Specialty DRAMs - 1Mx16, VFBGA-48; Available 2Q04
Specialty DRAMs - 1Mx16, VGBGA-48; Available 2Q04
16M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| HY5DU561622CTP-28 HY5DU561622CTP-33 HY5DU561622CTP |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| HY5V56BF HY5V56BL/SF-HI HY5V56BL/SF-SI |
SDRAM - 256Mb
16Mx16|3.3V|8K|H|SDR SDRAM - 256M
|
Hynix Semiconductor
|
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
| K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AT88SC0104CA-SU88SC0104 AT88SC0104CA-MP88SC0104 AT |
SPECIALTY MEMORY CIRCUIT, PDSO8 GREEN, PLASTIC, SOIC-8
SPECIALTY MEMORY CIRCUIT, DMA
SPECIALTY MEMORY CIRCUIT, QMA
SPECIALTY MEMORY CIRCUIT, PDIP8 GREEN, PLASTIC, PDIP-8
SPECIALTY MEMORY CIRCUIT, PTSO8
|
Atmel, Corp.
ATMEL CORP
|
| AT88SC0204CA-MP88SC0204 AT88SC0204CA-WI88SC0204 AT |
SPECIALTY MEMORY CIRCUIT, DMA
SPECIALTY MEMORY CIRCUIT WAFER
SPECIALTY MEMORY CIRCUIT, PTSO8 4.40 MM, GREEN, PLASTIC, TSSOP-8
SPECIALTY MEMORY CIRCUIT, PDSO8 GREEN, PLASTIC, SOIC-8
SPECIALTY MEMORY CIRCUIT, QMA
|
Atmel, Corp.
ATMEL CORP
|
| M470L1624BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|
