| PART |
Description |
Maker |
| RM1200DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DY-66S |
HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module
|
Mitsubishi Electric Semiconductor
|
| FM400TU-3A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| FM600TU-3A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| FM600TU-07A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| FM400TU-07A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| FM400TU-2A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| UFB60FA60P |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB120FA40P UFB120FA40 |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
| UFB120FA20P |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
