| PART |
Description |
Maker |
| AN3232 |
Mounting recommendations
|
STMicroelectronics
|
| AN4208 |
package description and recommendations for use
|
STMicroelectronics
|
| AN1751 |
EMI Filters: Recommendations and measurements
|
STMicroelectronics
|
| AN899 |
MCUS - SOLDERING RECOMMENDATIONS AND PACKAGING INFORMATION
|
SGS Thomson Microelectronics
|
| CM75E3U-24H |
Chopper IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM50DY-24H |
Dual IGBTMOD 50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| SDR4512M |
45 AMP 1200 VOLTS 80 nsec RECTIFIER 45 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| FF800R12KE3 |
Technische Information / technical information
1200 A, 1200 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
eupec GmbH
|
