PART |
Description |
Maker |
AN3232 |
Mounting recommendations
|
STMicroelectronics
|
AN4208 |
package description and recommendations for use
|
STMicroelectronics
|
TN1163 |
Description of WLCSP for microcontrollers and recommendations for use
|
STMicroelectronics
|
AN-902 |
Twisted Pair FDDI Magnetics Overview and Recommendations
|
http://
|
CM75DU-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
TA202412 TA202414 TA203012 TA203014 TA204012 TA204 |
Phase Control SCR (1200-1400 Amperes Avg 2400-4000 Volts) 第一阶段控制晶闸管(1200-1400安培平均2400-4000伏特
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor... POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR 1125 A, 1200 V, SCR, TO-200AB 1950 A, 800 V, SCR, TO-200AC 5087 A, 1600 V, SCR 5087 A, 1800 V, SCR 2749 A, 1800 V, SCR 2749 A, 800 V, SCR 2110 A, 3000 V, SCR 2749 A, 600 V, SCR 1895 A, 1000 V, SCR, TO-200AC 2268 A, 1200 V, SCR 5260 A, 1200 V, SCR 1690 A, 800 V, SCR, TO-200AC 2749 A, 1600 V, SCR 5260 A, 1600 V, SCR 2749 A, 1000 V, SCR 1765 A, 1200 V, SCR, TO-200AC 1765 A, 1600 V, SCR, TO-200AC 2749 A, 1200 V, SCR 2749 A, 400 V, SCR 1030 A, 800 V, SCR, TO-200AB 1715 A, 600 V, SCR, TO-200AC 3140 A, 600 V, SCR 2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
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