| PART |
Description |
Maker |
| ISL9N327AD3ST FAIRCHILDSEMICONDUCTORCORP-ISL9N327A |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| AN805 |
PWM Optimized Power MOSFETs for Low-Voltage DC/DC Conversion
|
Vishay Siliconix
|
| ISL9N310AS3ST ISL9N310AS3 ISL9N310AP3 |
N-CHANNEL LOGIC LEVEL PWM OPTIMIZED ULTRAFET TRENCH POWER MOSFETS
|
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9N315AD3 ISL9N315AD3ST |
From old datasheet system
N-CHANNEL LOGIC LEVEL PWM OPTIMIZED ULTRAFET TRENCH POWER MOSFETS
|
FAIRCHILD[Fairchild Semiconductor]
|
| IP2003NBSP IP2003 |
Fully optimized solution for high current synchronous buck multiphase applications in a LGA power block.
MULTIPHASE OPTIMIZED LGA POWER BLOCK
|
IRF[International Rectifier]
|
| IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
ETC[ETC]
|
| IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| IXFH26N60Q IXFT26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFE39N90 |
HiPerFET Power MOSFETs Single Die MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
