PART |
Description |
Maker |
1N90 1N90L-TA3-T 1N90L-TF1-T 1N90G-TA3-T 1N90G-TF1 |
1 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
3N90ZL-TF1-T |
3 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
3N90L-TQ2-R 3N90L-TQ2-T 3N90L-TA3-T 3N90G-TA3-T 3N |
3 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
SDR936Z SDR939M |
30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 900 V, SILICON, RECTIFIER DIODE, TO-254AA 30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
2SK2480 2SK2480-AZ |
3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC Corp. NEC[NEC]
|
2SK2487 2SK2487-A |
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
IRFB20STRRPBF IRFB20SPBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
IXFM13N90 IXFH10N90 IXYSCORP-IXFT13N90 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强HiPerFET功率MOSFET) 10 A, 900 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs
|
IXYS, Corp. ETC IXYS Corporation
|
NTD24N06L NTD24N06L-1 NTD24N06L-1G NTD24N06LG NTD2 |
Power MOSFET 24 Amps, 60 Volts, Logic Level N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 24 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 24Amps, 60Volts Logic Level N-Channel DPAK(24A, 60 V,逻辑电平,N通道,DPAK封装的功率MOSFET) Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
|
ON Semiconductor
|
SDR939_3 SDR936_3 SDR936-3 SDR937_3 SDR938_3 SDR93 |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SDR529SMS SDR526 SDR526SMS SDR527 SDR527SMS SDR528 |
3 AMPS 600 - 900 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, I... SSDI[Solid States Devices, Inc]
|
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