PART |
Description |
Maker |
ES1D ES1J ES1E |
SUPER MOUNT DEVICES RECTIFIERS
|
Jinan Jingheng (Group) Co.,Ltd
|
2FAG-M12R 2FAG-M12R07 |
Integrated Passive & Active Devices
|
Bourns Electronic Solut... Bourns Electronic Solutions
|
2FAF-M8R |
Integrated Passive & Active Devices
|
BOURNS[Bourns Electronic Solutions]
|
2FAF-M8R |
Integrated Passive & Active Devices
|
Bourns, Inc.
|
AM2520SYC03 |
The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
|
Kingbright Electronic Kingbright Corporation
|
L76761CSYC |
The Super Bright Yellow source color devices are made with DH InGaAIP on GaAs substrate Light Emitting Diode.
|
Kingbright Electronic KINGBRIGHT[Kingbright Corporation]
|
MAX5986A MAX5987A MAX5987AETE MAX5986AETE |
IEEE 802.3af-Compliant, High-Efficiency, Class 1,Powered Devices with Integrated DC-DC Converter
|
Maxim Integrated Products
|
HCPL0600 HCPL0601 HCPL0611 HCPL0637 HCPL0638 HCPL0 |
The HCPL06XX optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output (single channel devices).
|
Fairchild Semiconductor
|
EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
NTE30115 |
LED − Triple Color 5mm Super Fresh Red/Super Green/Super Blue
|
NTE Electronics
|
NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|