PART |
Description |
Maker |
MLD1N06CL MLD1N06CLT4 MLD1N06CLT4G |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N Channel DPAK(智能MOSFET) SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK
|
ON Semiconductor
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MLD2N06CLT4 MLD2N06CLT4G MLD2N06CL MLD2N06CLG |
SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK SMARTDISCRETES MOSFET 2 Amp, 62 Volts, Logic Level N Channel DPAK(智能MOSFET)
|
http:// ONSEMI[ON Semiconductor]
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MLP2N06CL-D |
SMARTDISCRETES MOSFET 2 Amps, 62 Volts, Logic Level N-Channel TO-220
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ON Semiconductor
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BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS) Triacs Silicon Bidirectional Thyristors 600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
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ON Semiconductor
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STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT 40 个字x 1 线5 x 7 点阵字符和光 N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
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MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 6.4-7.2 GHz Band 16W Internally Matched GaAs FET
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET From old datasheet system 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC42V4450A C424450A |
From old datasheet system 4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
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CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
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ON Semiconductor Emulation Technology, Inc. Electronic Theatre Controls, Inc. HIROSE ELECTRIC Co., Ltd. Xiamen Hongfa Electroacoustic Co., Ltd. ITT, Corp.
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