| PART |
Description |
Maker |
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BU4069F BU4069FV BU4069UB-E2 BU4069UBF-E2 BU4069UB |
4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, PDSO14
High Voltage CMOS Logic ICs
High Voltage CMOS Logic ICs Gate
|
http://
Rohm
|
| AP20GT60P-HF AP20GT60P-HF14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
High Speed Switching
|
Advanced Power Electronics Corp.
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| AP28G40GEM-HF AP28G40GEM-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
High Peak Current Capability
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP30G120BSW-HF AP30G120BSW-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
High Speed Switching
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
