PART |
Description |
Maker |
SIR-563ST3F |
Sensors > Infrared Light Emitting Diodes
|
ROHM
|
SIR-56ST3F |
Sensors > Infrared Light Emitting Diodes
|
ROHM
|
TLN208 |
LED LAMP GaAlAs INFRARED EMITTER INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor Toshiba Corporation
|
TLN210 TLN210F |
INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Corporation Toshiba Semiconductor
|
QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRAE500 IRAEXXX IRAE410 IRA-E410 IRA-E410QW1 IRA-E |
PYROELECTRIC INFRARED SENSORS IRA SERIES PYROELECTRIC INFRARED SENSORS IRA SERIES 热释电红外传感器爱尔兰共和军系列 PYROELECTRIC INFRARED SENSORS IRA SERIES SPECIALTY OPTOELECTRONIC DEVICE
|
Murata Manufacturing Co., L... MURATA[Murata Manufacturing Co., Ltd.] Murata Electronics MURATA MANUFACTURING CO LTD Murata Manufacturing Co...
|
TSL262 TSL260 TSL261 |
IR LIGHTTOVOLTAGE OPTICAL SENSORS IR LIGHTTOVOLTAGE OPTICAL SENSORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
G9208-256W G9211-256S G9213-256S G9206-256W G9212- |
Near infrared image sensors (0.9 to 1.67 渭m / 2.55 渭m) Near infrared image sensors (0.9 to 1.67 μm / 2.55 μm)
|
Hamamatsu Corporation
|
TSL250R TSL251R TSL252 TSL252R |
LIGHT-TO-VOLTAGE OPTICAL SENSORS
|
ams AG austriamicrosystems AG
|
TLN10807 TLN108F |
INFRARED LEDS PHOTO SENSORS
|
Toshiba Semiconductor
|