| PART |
Description |
Maker |
| HYB25D256400BT HYB25D256800BC-7 HYB25D256400BT-7 H |
256Mbit (64Mx4) DDR200 (2-2-2) ？的256Mbit4Mx4）DDR200-2-2）？
256Mbit (64Mx4) DDR333 (2.5-3-3)
256Mbit (16Mx16) DDR200 (2-2-2)
256Mbit (32Mx8) DDR200 (2-2-2)
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR266A (2-3-3)
256Mb (64Mx4) FBGA DDR266A (2-3-3)
256-Mbit Double Data Rate SDRAM/ Die Rev. B
256-Mbit Double Data Rate SDRAM, Die Rev. B
|
http://
Infineon Technologies AG
Infineon Technologies A...
|
| K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N2632 |
128Mbit GDDR2 SDRAM
|
Samsung Electronic
|
| K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N5 |
512Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| V54C3256164VS V54C3256164VT V54C3256404VS V54C3256 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
3.3V, 2K refresh ultra-high performance 1M x 16 SDRAM 2 banks x 512Kbit x 16
|
Mosel Vitelic Corp
|
| HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|
| K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J5 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| HY27SS561M HY27US08561M HY27SS16561M HY27US561M HY |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
Hynix Semiconductor Inc.
|
