| PART |
Description |
Maker |
| NE6510179A NE6510179A-T1 NE6510179 NE6510179A-A NE |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
California Eastern Labs
|
| NE5520279A-T1 NE5520279A |
NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
NEC Corp.
NEC[NEC]
|
| NE6510179A-A NE6510179A-T1 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
Duracell
California Eastern Laboratories
|
| NE46134-T1-AZ NE46100 NE46134-T1 NE46134-T1-QS-AZ |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
Duracell
California Eastern Labs
|
| NE46134 NE46134-T1 NE46100 |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| NESG250134-T1-AZ NESG250134 NESG250134-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)
|
CEL[California Eastern Labs]
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| TGA1073A TGA1073A-SCC |
26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| MGFC5218 C5218A |
18000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
K-Band 2-Stage Power Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC5217 C5217A |
18000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
K-Band 2-Stage Power Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| UPG2214TB UPG2214TB-E4-A |
NECs W LOW VOLTAGE L, S-BAND SPDT SWITCH
NECs ?W LOW VOLTAGE L, S-BAND SPDT SWITCH
|
NEC[NEC]
|
| UPG2008TK UPG2008TK-E2 |
NECs L,S BAND ULTRA SMALL SPDT GaAs MMIC SWITCH
|
California Eastern Labs
|
