| PART |
Description |
Maker |
| KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
| KMM372C804BS |
8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372C410CK KMM372C400CS KMM372C410CS KMM372C400C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372V400CK |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V 4米72的DRAM内存ECC的使Mx4KK刷新.3
|
Samsung Semiconductor Co., Ltd.
|
| M372F3280DJ3-C M372F3200DJ3-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
SAMSUNG[Samsung semiconductor]
|
| KMM372V3280BS1 KMM372V3200BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
Samsung semiconductor
|
| HMD16M72D9A-F10 HMD16M72D9A-10 HMD16M72D9A-13 HMD1 |
SYNCHRONOUS DRAM MODULE 128MBYTE (8MX72BIT),DIMM WITH ECC BASED ON 16MX8, 4BANKS, 4K REF., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HSD16M72D18A-13 HSD16M72D18A-10 HSD16M72D18A-10L H |
Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| KMM372F3200BS1 KMM372F3280BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
| SGN02G72F1BQ1SA SGN02G72F1BQ1SA-CCRT SGN02G72F1BQ1 |
204 Pin ECC SO-DIMM
|
Swissbit
|
