| PART |
Description |
Maker |
| AN1228 |
How to relate LMOS device parameters to RF performance
|
STMicroelectronics
|
| IDP08E65D1 |
High Power RF LDMOS FETs
Temperature stable behaviour of key parameters
|
Infineon Technologies AG
Infineon Technologies A...
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| SI4416DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4378DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| STGP20V60F |
Tight parameters distribution
|
STMicroelectronics
|
| SI4856ADY-RC |
R-C Thermal Model Parameters
|
VAISH[Vaishali Semiconductor]
|
| RLDH980-70-3 |
main technical parameters
|
Roithner LaserTechnik G...
|
| VCO-110TC |
Nominal Operating Parameters
|
RF Micro Devices
|
| AN1783 |
Determining MCU Oscillator Start-Up Parameters
|
Motorola
|
