PART |
Description |
Maker |
DS1380N DS1380SN |
NVRAM (Battery Based)
|
|
DS1249Y-70 DS1249Y-100-IND DS1249Y-70-IND DS1249AB |
NVRAM (Battery Based) NVRAM中(基于电池
|
Maxim Integrated Products, Inc.
|
FM1408S-150DSC FM1408-80DSC FM1608-80DSC FM1608-80 |
NVRAM (Ferroelectric Based) NVRAM中(基于铁电
|
STMicroelectronics N.V.
|
DS1220Y-150-IND DS1220Y-200-IND DS1220Y-100-IND DS |
NVRAM (Battery Based) NVRAM中(基于电池
|
Maxim Integrated Products, Inc.
|
DS1646L-120 |
NVRAM (Battery Based) NVRAM中(基于电池
|
Maxim Integrated Products, Inc.
|
STK11C68-W30 STK11C68-W45 STK11C68-W45I STK11C68-C |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:8A; Holding Current:50mA Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Current, It av:15A; Holding Current:70mA; Leaded Process Compatible:Yes RoHS Compliant: Yes Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Package/Case:TO-3; Current, It av:25A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA NVRAM (EEPROM Based) NVRAM中(EEPROM的基础 Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
|
Electronic Theatre Controls, Inc.
|
DS1250Y-70 DS1250Y-70-IND DS1250Y-100-IND DS1250AB |
NVRAM (Battery Based) From old datasheet system NOVRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Dallas Semiconductor Corp
|
DS1275 DS1270Y-70-IND DS1270Y-100-IND DS1270AB-70- |
NVRAM (Battery Based) NVRAM中(基于电池 IC,LINE TRANSCEIVER,CMOS,1 DRIVER,1 RCVR,DIP,8PIN,PLASTIC
|
Maxim Integrated Products, Inc. Dallas
|
M41ST87WMX6 M41ST87WMX6TR M41ST87YMX6 M41ST87YMX6T |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
HMS88T1232 HMS88T1264 |
Turbo 80C52 Core Based High Security SmartcardController With 32K Bytes EEPROM Turbo 80C52 Core Based High Security Smartcard Controller With 64K Bytes EEPROM
|
http:// ETC[ETC]
|
AN392 |
Microcontrollers and TRIAC-based dimmers
|
STMicroelectronics
|
M68HC711CFD M68HC711CFG M68HC711CFG_D M68HC711CFG/ |
CONFIG Register Programming for EEPROM-based M68HC11 Microcontrollers CONFIG REGISTER PROGRAMMING FOR EEPROM-BASED MHC MICROCONTROLLERS
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc. Freescale (Motorola)
|