| PART |
Description |
Maker |
| SDR955 SDR953 SDR954 |
50 AMP 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, Inc
|
| SDR9105CTP SDR9103CTN SDR9103CTP SDR9104CTN SDR910 |
100 AMP, 300 - 500 VOLTS 40 nsec HYPER FAST CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR905 SDR900 SDR901 SDR902 SDR903 SDR904 |
30 AMP 50-500 VOLTS 50 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SFA30PJE SFA10PJE SFA20PJE |
6 AMP 100-300 VOLTS 40 nsec HYPER FAST POSITIVE CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SFA30PJE SFA10PJE SFA20PJE |
6 AMP 100-300 VOLTS 40 nsec HYPER FAST POSITIVE CENTERTAP RECTIFIER 6安培100-300伏特0纳秒超快速整流阳性CENTERTAP
From old datasheet system
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| SDR952/3 SDR950/3 SDR951/3 SDR950-3 |
60 AMP 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER 60 A, 100 V, SILICON, RECTIFIER DIODE, TO-3
60 AMP 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER 60安培100 - 200伏特5纳秒超快速整
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| SDR959 SDR9510 SDR9511 SDR958 |
50 AMP 800-1100 VOLTS 80 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR627-59 SDR628/59 |
20 AMP 700-800 VOLTS 60 nsec ULTRA FAST RECTIFIER
|
Solid States Devices, Inc.
|
| SDR9510N SDR959P SDR9510P SDR9511N SDR9511P SDR958 |
50 AMP 800 -1100 VOLTS 80 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
