| PART |
Description |
Maker |
| SF5GZ47 SF5JZ47 |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA THYRISITOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| USF3J48 SF3G48 SF3J48 USF3G48 |
THYRISTOR SILICON PLANAR TYPE 硅平面型晶闸
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| SF10J41A SF10G41A |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| UP03312 |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
|
| SM6J45A SM6G45 SM6G45A SM6J45 |
BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TO-220 .75H .57W .5D W/MTG TAB
Heat Sink; Package/Case:TO-220; Body Material:Aluminum; Thermal Resistance:27.3 C/W; Color:Black; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No; Size/Dimensions:0.750H x 0.500W"
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| NP043A2 |
Composite Device - Composite Transistors
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 80 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
|
| 1SV322 |
Diode Silicon Epitaxial Planar Type TCXO/VCO
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| 015A5.6 015A5.1 015A4.7 015A4.3 015A3.9 015A3.6 01 |
Silicon diode for constant voltage regulation applications
DIODE SILICON EPTAXIAL PLANAR TYPE
From old datasheet system
PCB Filters RoHS Compliant: Yes
CBE T9-711C-12 二极管外延硅平面
Diode Silicon Epitaxial Planar Type 二极管外延硅平面
CBE TA45-AN21F120C0 二极管外延硅平面
Diode, Constant Voltage Regulator Diode
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| 1N962 1N963 1N967 1N978 1N957 1N958 1N959 1N960 1N |
30 V, 4.2 mA, silicon planar zener diode
7.5 V, 16.5 mA, silicon planar zener diode
SILICON PLANAR ZENER DIODES
14PX2R TH STRAIGHT
CONN, 3PX1R TH STRAIGHT
CONN. 2 POSITIONS ALIGNED 2.54MM
1X30FT SELF-FUSING TAPE
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Solder Tail; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 硅平面稳压二极管
CONN HDR 8POS RT ANG POST 硅平面稳压二极管
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Wire Wrap; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
10 V, 12.5 mA, silicon planar zener diode
39 V, 3.2 mA, silicon planar zener diode
6.8 V, 18.5 mA, silicon planar zener diode
|
http://
SEMTECH[Semtech Corporation]
Semtech, Corp.
Honey Technology
|
| DA3X105D |
Silicon epitaxial planar type - For high speed switching circuits - 2 elements anode-common type
|
Panasonic
|
