| PART |
Description |
Maker |
| M6MGT641S8BKT M6MGB641S8BKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| KBY00U00VA-B450 |
MCP Specification
|
Samsung semiconductor
|
| S73WS-P S75WS256NDGBFWLH2 S75WS256NDGBFWLH0 S75WS2 |
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion Inc.
Spansion, Inc.
|
| AM50DLI28BG AM50DL128BG |
Am50DL128BG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am50DL128BG -堆叠式多芯片封装（MCP）闪存和SRAM
|
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品（MCP）的512兆位2兆16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
|
| AM70PDL127BDH66IS AM70PDL127BDH66IT AM70PDL127BDH8 |
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) 堆叠式多芯片封装（MCP / XIP）的快闪记忆体，数据存储的MirrorBit闪存和移动存储芯片（XIP）的
2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS 2 × 64兆位米16位）的CMOS 3.0伏特，只有页面模式闪存数据存28兆位米16位）的CMOS
|
Spansion, Inc.
Spansion Inc.
|
| MB84VD22280FE-70 MB84VD22280FA-70 MB84VD22290FE-70 |
2-Stacked MCP
|
Fujitsu
|
| KAG00J007M-FGG2 |
MCP Memory
|
Samsung Electronics
|
| MB84VD21181EM-70PBS MB84VD21183EM-70PBS MB84VD2118 |
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS SPECIALTY MEMORY CIRCUIT, PBGA56
|
Spansion Inc.
Spansion, Inc.
|
| WF2M16-XDAX5 WF2M16-XDLX5 WF2M16-XFLX5 |
Flash MCP 闪存MCP
|
Abracon, Corp.
Lumex, Inc.
|
| S72WS256NEEBAW4Y3 S72WS256NEEBFWU7 S72WS256NEEBFWU |
Based MCP/PoP Products
|
SPANSION[SPANSION]
|
