| PART |
Description |
Maker |
| APT6045BVR |
POWER MOS V 600V 15A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| M68732H 68732H M68732 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STE26NA90 6245 -STE26NA90 |
N-Channel 900V-0.25惟-26A-ISOTOP Fast Power MOSFET(N娌??蹇?????MOSFET)
From old datasheet system
N - CHANNEL 900V - 0.25ohm- 26A - ISOTOP FAST POWER MOSFET
N - CHANNEL 900V - 0.25 Ohm - 26A - ISOTOP FAST POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| APT12057B2LL APT12057LLL |
POWER MOS 7 1200V 22A 0.570 Ohm
|
Advanced Power Technology
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| M68732EH 68732EH M68732 |
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FRK9150H FRK9150R FRK9150D FN3266 |
26A/ -100V/ 0.125 Ohm/ Rad Hard/ P-Channel Power MOSFETs
26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| FRK9260R FRK9260D FRK9260H |
26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs 26 A, 200 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
26A/ -200V/ 0.200 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| EMP25Q12A EMP25Q12B EMP25Q12C EMP25Q12D EMP25Q12M |
Programmable solated intelligent power module, a 25A, 1200V, three-phase inverter for 15kW industrial and servo motors
NPT IGBTs 25A, 1200V
|
International Rectifier
|
