| PART |
Description |
Maker |
| AS222-92 |
AS222-92:PHEMT GaAs IC SPDT Switch 0.1 GHz|DC-6 GHz Plastic Packaged and Chip|SPST AS222 - 92：PHEMT的砷化镓集成电路单刀双掷开.1-3千兆赫|直流- 6 GHz的塑料包装和芯片|聚苯乙烯
PHEMT GaAs IC SPDT Switch 0.1 - 3 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|
| XR1005-QD XR1005-QD-EV1 XR1005-QD-0N0T XR1005-QD-0 |
19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm SPECIALTY TELECOM CIRCUIT, QCC44
19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm 19.0-26.0 GHz的砷化镓接收机QFN封装，为7x7 mm
|
Mimix Broadband, Inc.
MIMIX BROADBAND INC
|
| TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication
GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| HMC361 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 11.0 GHz
From old datasheet system
Prescaler
600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs HBT MMIC DIVIDE-BY-2/ DC - 11.0 GHz
|
Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
美国讯泰微波有限公司上海代表
|
| HMC258LM3 -HMC258LM3 |
600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs MMIC SUB-HARMONIC SMT MIXER/ 14 - 20 GHz
GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMMC-2027 |
DC-26.5 GHz SPDT GaAs MMIC Switch(DC-26.5 GHz 单刀双掷砷化镓单片微波集成电路开
|
Agilent(Hewlett-Packard)
|
| UPG2185T6R-E2 UPG2185T6R-E2-A |
GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
|
Renesas Electronics Corporation
|
| XD1004-BD-EV1 XD1004-BD-000V |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10.0-40.0千兆赫的GaAs MMIC分布式放大器
|
Mimix Broadband, Inc.
|
| XB1005-BD-EV1 XB1005-BD-000V |
35.0-45.0 GHz GaAs MMIC Buffer Amplifier 35.0-45.0 GHz的砷化镓单片缓冲放大
35.0-45.0 GHz GaAs MMIC Buffer Amplifier 35000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Mimix Broadband, Inc.
|
| EVAL01-HMC1055LP2C |
0.5 GHz to 4.0 GHz, GaAs, SPST Switch
|
Analog Devices
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
