| PART |
Description |
Maker |
| 43BDIE2V |
RAD-hardened precision bipolar single operational amplifier
|
STMicroelectronics
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| 2N5302 |
Bipolar NPN Device in a Bipolar NPN Device in a Metal Package.
|
SEME-LAB[Seme LAB]
|
| 2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB
NPN BIPOLAR TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
| 2N5429.MOD 2N5429 |
Bipolar NPN Device in a Hermetically sealed TO66
7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA
|
Seme LAB
SEMELAB LTD
|
| BU205 BU205.MODR1 |
2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
| 2N5337X |
Bipolar NPN Device in a Hermetically sealed TO39
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-39
|
Seme LAB
|
| 2N6536 2N6536.MOD |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-213AA
Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD
Seme LAB
|
