| PART |
Description |
Maker |
| 79LV0408XPFK-20 79LV0408XPFI-20 79LV0408XPFH-20 79 |
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 250 ns, PDFP40
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 200 ns, PDFP40
IC LOGIC 3245 OCTAL FET BUS SWITCH -40 85C QSOP-20 55/TUBE 512K X 8 EEPROM 3V, 250 ns, PDFP40
|
Maxwell Technologies, Inc
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EM681FV16A |
512K x 16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM6163FR32AS-45L EM6163FU16AS-45L EM6163FV8AS-45L |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| A81L801 A81L801UG-70F A81L801TG-70F |
Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
|
AMIC Technology Corporation
|
| BS616LV8022BI BS616LV8022 BS616LV8022BC |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
