PART |
Description |
Maker |
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
V20120SHM3-4W V20120S-M3-4W VI20120SHM3-4W VI20120 |
High-Voltage Trench MOS Barrier Schottky Rectifier 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|
KDR368E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR357 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
SD101AW SD101BW SD101CW |
SCHOTTKY BARRIER SWITCHING DIODE (SD101AW - SD101CW) SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
DIODES[Diodes Incorporated]
|
5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc.
|
RB521ZS-301 |
Schottky Barrier Diode 0.1 A, 30 V, SILICON, SIGNAL DIODE ULTRA SMALL, GMD2, 2 PIN Schottky Barrier Diode
|
Rohm Incon, Inc.
|
121NQ045 |
Schottky Rectifier; Package: HALF_PAK; IO (A): 120; VR (V): 45; IFSM (A): 2000; VF (V): 0.7; 120 A, 45 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
B5A60VIC B5A60 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated Diodes, Inc.
|
DSB02A20 DSB02A30 DSB02A40 DSB05A40 1N6675 1N6676 |
Schottky Barrier Rectifiers(????哄????娴?????) DIODE SWITCHING 80V 100MA 1005 Schottky Rectifier 肖特基整流器 0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
|
Compensated Deuices Inc... 3M Company CDI-DIODE[Compensated Deuices Incorporated] Compensated Devices Incorporated
|