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HTPT66 - High Temperature Power Toroids

HTPT66_865949.PDF Datasheet

 
Part No. HTPT66 HTPT66R
Description High Temperature Power Toroids

File Size 417.96K  /  1 Page  

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API Delevan



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Part: HTPLREG05TC
Maker: Honeywell Microelectronics & Precision Sensors
Pack: ETC
Stock: Reserved
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 Related Part Number
PART Description Maker
HTPT66-153K HTPT66-152K    High Temperature Power Toroids
API Delevan
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE POWER
PT1000 Power Toroids-Horizontal or Vertical Mount
API Delevan
567UVG010MFBJ 187UVG016MFBJ High temperature ?Very Low ESR ?High ripple current ?stable with temperature ?High frequency
Illinois Capacitor, Inc...
A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护,高温,霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型,工作于高温,霍尔效应锁存器(
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
ENC102D-10A ENC112D-10A ENC820D-10A ENC220D-10B EN ±15kV ESD Protected, 5V, Low Power, High Speed and Slew Rate Limited, Full Duplex, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; Temperature Range: -40°C to 85°C; Package: 16-QFN
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
STD MOV
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
Central Semiconductor, Corp.
MAX6416 MAX6418 MAX6412 MAX6413UK37-T MAX6413UK38- 330MHz, Low Power, Current Feedback Video Operational Amplifier with Output Disable; Temperature Range: -40°C to 85°C; Package: 8-PDIP
" Low-Power, Single/Dual-Voltage ?P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay"
Dual Long-Tailed Pair Transistor Array; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
380MHz, SOT-23, Low Power Current Feedback Operational Amplifier; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
12-Bit, 80 MSPS, High Speed Video D/A Converter; Temperature Range: 0°C to 70°C; Package: 28-SOIC
Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection; Temperature Range: -40°C to 85°C; Package: 28-SOIC
380MHz, SOT-23, Low Power Current Feedback Operational Amplifier; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
Gilbert Cell UHF Transistor Array; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
850MHz, Low Distortion Programmable Gain Buffer Amplifier; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
330MHz, Low Power, Current Feedback Video Operational Amplifier; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
10-Bit, 40MSPS A/D Converter with CMOS Outputs; Temperature Range: 0&degC to 70°C; Package: 28-SOIC T&R 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
8-Bit, 165/125/60MSPS, High Speed D/A Converter; Temperature Range: -40°C to 85°C; Package: 28-TSSOP T&R 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Complete, 12-Bit A/D Converters with Microprocessor Interface; Temperature Range: See Datasheet; Package: 28-PDIP 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
12-Bit, Low Cost, Monolithic D/A Converters; Temperature Range: 0&degC to 70°C; Package: 24-PDIP 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
360MHz, Low Power, Video Operational Amplifier with Output Limiting; Temperature Range: -40°C to 85°C; Package: 8-SOIC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Dual Long-Tailed Pair Transistor Array; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Maxim Integrated Products, Inc.
电源管理
MAXIM INTEGRATED PRODUCTS INC
EDI8F81025LP100B6C EDI8F81025LP100B6I EDI8F81025LP Dual Input, High Speed, Dual Channel Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
Dual Input, High Speed, Dual Channel Power MOSFET Driver; Temperature Range: 0°C to 70°C; Package: 8-PDIP
Dual Input, High Speed, Dual Channel Power MOSFET Driver; Temperature Range: 0°C to 70°C; Package: 8-SOIC
Dual Channel, High Speed, High Current Line Driver with 3-State; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
Dual Input, High Speed, Dual Channel Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
Dual Channel, High Speed, High Current Line Driver with 3-State; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R x8的SRAM模块
Electronic Theatre Controls, Inc.
AZ762H-1CB-24D AZ762H-1CB-24DE AZ762H-1CB-24DS AZ7 16 A SPDT MINIATURE HIGH TEMPERATURE POWER RELAY
American Zettler, Inc.
http://
EMC5.0F-LC EMC8.0F-LC EMC3.3F-LC EMC15F-LC EMC12F- Direct ProTek Replacement:EMC5.0F-LC
Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 24-QFN
1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator; Temperature Range: -40°C to 85°C; Package: 10-DFN
High Power LED Driver; Temperature Range: -25°C to 85°C; Package: 20-QFN
Automotive Grade TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -25°C to 85°C; Package: 32-TQFP
直接太克替代:EMC3.3F,立法会
Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers; Temperature Range: 0&degC to 70°C; Package: 24-QFN 直接太克替代:EMC8.0F,立法会
New Japan Radio Co., Ltd.
1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
 
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