| PART |
Description |
Maker |
| MX27C4000 MX27C4000MC-10 MX27C4000MC-12 MX27C4000M |
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 150 ns, PDSO32
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| TC55VD1636FF-133 |
512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)
|
Toshiba Corporation
|
| TC55VD818FF-150 TC55VD818FF-133 TC55VD818FF-143 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器（为512k字x18位同步无转向静态内存）
|
Toshiba Corporation
Toshiba, Corp.
|
| MBM29LV004TC-12 MBM29LV004TC-12PNS MBM29LV004TC-12 |
FLASH MEMORY 4M (512K x 8) BIT
4M (512K X 8) BIT
|
Fujitsu Microelectronics
|
| CAT28F512 CAT28F512TRI-12T CAT28F512TRI-15T CAT28F |
120ns 512K-bit CMOS flash memory
90ns 512K-bit CMOS flash memory
150ns 512K-bit CMOS flash memory
512K-Bit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7
800 A, 2000 V, SCR MODULE-7
800 A, 2200 V, SCR MODULE-7
150 A, 800 V, SCR
900 A, 800 V, SCR
900 A, 600 V, SCR
800 A, 800 V, SCR
120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| 29LV800BT-70 29LV800BB-70 29LV800BB-90 29LV800BT-9 |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Macronix International Co., Ltd.
|
| V29C51000T-45P V29C51000T-45T V29C51000T-45J V29C5 |
512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 512k5536 × 85伏的CMOS闪存
512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 12k5536 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
| AM41LV3204MT10IT |
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
|
Advanced Micro Devices, Inc.
|
