| PART |
Description |
Maker |
| MGFC40V7785A C407785A |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TGA2237-SM TGA2237-SM-15 |
0.03 2.5GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58035UMITR SY58035UMG SY58035UMGTR SY58035UMI SY |
4.5GHz, 1:6 LVPECL FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| MGFK35V4045_03 MGFK35V4045 MGFK35V404503 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ESLT-S245E |
2012 Size 2.4/2.5GHz Band Chip Multilayer RF Transformer
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MGFC42V7785A |
7.7-8.5GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7785A C367785A |
From old datasheet system
7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
