| PART |
Description |
Maker |
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58035U SY58035UMITR |
4.5GHz, 1:6 LVPECL FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL TERMINATION 4.5GHz:6的LVPECL扇出缓冲器与2:1 MUX输入和内部终
4.5GHz, 1:6 LVPECL FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL TERMINATION 58035 SERIES, LOW SKEW CLOCK DRIVER, 6 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), QCC32
|
Micrel Semiconductor, Inc.
|
| FMPA215107 FMPA2151 |
2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
2.4-2.5GHz and 4.95.9GHz Dual Band Linear Power Amplifier Module
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| SY89871U |
2.5GHz ANY DIFF. IN-TO-LVPECL PROGRAMMABLE CLOCK DIVIDER/ FANOUT BUFFER WI/INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MGFK44A4045 |
14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MGFC47A7785 |
7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
