| PART |
Description |
Maker |
| TGA2583-15 |
2.7 3.7GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TDA7497 |
10W 10W 10W/15W TRIPLE AMPLIFIER
10 10W STEREO AMPLIFIER WITH MUTE/ST-BY
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MGFS48V2527 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V7177A04 MGFC39V7177A |
7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX36V0717 X360717 |
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段4瓦国内MATCHD砷化镓场效应
From old datasheet system
|
Rohm Co., Ltd.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V3742_04 MGFC40V3742 MGFC40V374204 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V5258 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET 5.2 - 5.8GHz频段0W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
