| PART |
Description |
Maker |
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| CY7C0430BV CY7C04312BV-100BGC |
10 Gb/s 3.3V QuadPort DSE Family 32K X 18 FOUR-PORT SRAM, 5 ns, PBGA272
QuadPort DSE 1Mb Memory
|
Cypress Semiconductor, Corp.
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| CY27C256 CY27C256-120 CY27C256-120JC CY27C256-120P |
32K x 8-Bit CMOS EPROM 32K X 8 UVPROM, 55 ns, CDIP28
32K x 8-Bit CMOS EPROM 32K X 8 OTPROM, 150 ns, PDSO32
CONN PLUG HOUSING HA SIZE2 UPPER
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| PCI9056DB-091B |
32-bit, 66MHz PCI I/O accelerator
|
PLX Technology
|
| E2928A |
66MHz PCI Exerciser and Analyzer
|
Agilent (Hewlett-Packard)
|
| IDT72V73273 IDT72V73273BB IDT72V73273DR |
32K x 32K Digital Switch with Rate Matching
32k X 32k TSI, 65 I/Oat 2/4/8/16 or 32Mbps, Rate-Matching, 3.3V
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH WITH RATE MATCHING 32,768 X 32,768 CHANNELS
|
IDT[Integrated Device Technology]
|
| MLCP-65656L-85P883 ML0-65656V-80P883RD ML0-65656L- |
32K X 8 STANDARD SRAM, 85 ns, CDIP28 0.300 INCH, SIDE BRAZED, DIP-28
32K X 8 STANDARD SRAM, 80 ns, UUC28 DIE
32K X 8 STANDARD SRAM, 80 ns, CQFP28
32K X 8 STANDARD SRAM, 80 ns, CDIP28 0.600 INCH, CERDIP-28
32K X 8 STANDARD SRAM, 80 ns, CDIP28 0.600 INCH, SIDE BRAZED, DIP-28
32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K X 8 STANDARD SRAM, 85 ns, UUC28
32K X 8 STANDARD SRAM, 80 ns, PDSO28
|
Atmel, Corp.
ATMEL CORP
TEMIC SEMICONDUCTORS
|
| M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位（含2Mb x8兆x16插槽，引导块3V电源快闪记忆
CAP 3300UF 6.3V ELECT FC RADIAL 16兆位（含2Mb x8兆x16插槽，引导块V电源快闪记忆
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| CY62256VNLL-70SNXC CY62256VNLL-70SNC CY62256VNLL-7 |
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
|
Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
|
