| PART |
Description |
Maker |
| CLY5 |
High Power Packaged GaAs FET; 26.5 dBm
|
TriQuint Semiconductor
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| FLL21E040IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL21E010MK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| FLL800IQ-2C |
L-Band High Power GaAs FET
|
etc
List of Unclassifed Manufacturers
|
| HMMC-3124 HMMC-3124-BLK HMMC-3124-TR1 |
HMMC-3124 · SO-8 SMT 0.5-12GHz high eff. GaAs HBT prescalers
DC-12 GHZ PACKAGED HIGH EFFICIENCY DIVIDE-BY-4PRESCALER
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| FLL21E004ME |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E010MK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
