| PART |
Description |
Maker |
| GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
|
TOSHIBA
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA
|
| GT60M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT50J327 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| AP2344GN-HF AP2344GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| AP2346GN-HF AP2346GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| GT15J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT15J331 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| GT5J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
TOSHIBA
|
| GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
TOSHIBA
|
