| PART |
Description |
Maker |
| TC58128AFT |
128-MBIT (16M × 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| M27C1001-35FTR M27C1001-45FTR M27C100106 M27C1001- |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27V322-100F1 M27V322-150XP6 M27V322 M27V322-100B1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
Fuses, 150mA 250V SB 5X15 BULK
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM 32兆位Mb x16低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| AMD27C256 AM27C256-120 AM27C256-120EC AM27C256-120 |
256 Kilobit (32,768 x 8-Bit) CMOS EPROM
Circular Connector; No. of Contacts:5; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
8-input positive-NAND gates 14-SO 0 to 70 256千比特（32,768 × 8位）的CMOS存储
256 Kilobit (32,768 x 8-Bit) CMOS EPROM 256千比特（32,768 × 8位）的CMOS存储
256 Kilobit (32,768 x 8-Bit) CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO32
Quadruple 2-Input Multiplexers With Storage 16-PDIP 0 to 70
8-Line To 3-Line Priority Encoder 16-PDIP 0 to 70
Universal shift / storage registers 20-SOIC 0 to 70
8-input positive-NAND gates 14-SOIC 0 to 70
8-input positive-NAND gates 14-PDIP 0 to 70
8-Line To 3-Line Priority Encoder 16-SO 0 to 70
Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70
256 Kilobit (32/768 x 8-Bit) CMOS EPROM
|
Cypress Semiconductor, Corp.
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| TC58DVM92A1FT00 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
| TC58V64BFT |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58V64AFTI |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
