| PART |
Description |
Maker |
| STB4NB80 STB4NB80FP 5976 |
N - CHANNEL 800V - 3 Ohm - 4A - PowerMESH MOSFET
From old datasheet system
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道800V3Ω- 4A条，TO-220/TO-220FP PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STD1NB80 6648 STD1NB80T4 |
N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET
N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
N - CHANNEL 800V - 16 - 1A - DPAK/IPAK PowerMESH TM MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STP6NB80 STP6NB80FP |
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP
|
ST Microelectronics
|
| STP6NB80 STP6NB80FP |
N-CHANNEL 800V - 1.6 OHM - 5.7A - TO-220/TO-220FP
|
ST Microelectronics
|
| W8NB80 STW8NB80 |
N - CHANNEL 800V - 1.2 Ohm - 7.5A - TO-247 PowerMESH MOSFET
N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STW12NK80Z |
CONNECTOR ACCESSORY
N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 800V - 0.65 OHM - 10.5 A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
意法半导
STMicroelectronics
ST Microelectronics
|
| STE34NK80Z |
N-CHANNEL 800V - 0.20 OHM - 32A ISOTOP ZENER-PROTECTED SUPERMESH™POWER MOSFET
|
ST Microelectronics
|
| STY34NK80Z |
N-CHANNEL 800V - 0.20 OHM - 28A MAX247 ZENER-PROTECTED SUPERMESH™POWER MOSFET
|
ST Microelectronics
|
| STB7NK80ZT4 |
N-CHANNEL 800V - 1.5 OHM - 5.2A TO-220/TO-220FP/I2PAK/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
|
ST Microelectronics
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
