PART |
Description |
Maker |
SST27SF020-70-3C-PH |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST
|
SST31LF043A-70-4C-WI SST31LF041-300-4E-WH SST31LF0 |
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位的SRAM ComboMemory 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位SRAM ComboMemory 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32 XTAL MTL SMT HC49/USM 4 Mbit闪存1兆位56千位的SRAM ComboMemory XTAL CER SMT 7X5 2PAD 16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23 DIODE SWITCH 75V 350MW SOT-23 RECTIFIER SCHOTTKY SINGLE 5A 60V 175A-Ifsm 0.7Vf 0.5A-IR SMC 3K/REEL
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
|
SST29SF040 SST29SF040-55-4C-NH SST29SF040-55-4C-PH |
From old datasheet system SST29SF512/010/020/040, SST29VF512/010/020/040 512Kbit/ 1Mbit/ 2Mbit/ 4Mbit (x8) Small-Sector Flash 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
|
SST[Silicon Storage Technology, Inc] SST[Silicon Storage Technology Inc]
|
BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
HMNR5128D HMNR5128D-70 HMNR5128D-70I HMNR5128D-85 |
5.0 or 3.3V, 4 Mbit (512 Kbit x 8) TIMEKEEPER NVSRAM
|
Hanbit Electronics Co.,Ltd
|
M58BW016DT7T3FF M58BW016DT7T3FT M58BW016FT7T3FF M5 |
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
|
Numonyx B.V
|
M29W800DT70N6E M29W800DT70N6F M29W800DT70N6T M29W8 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107 64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM 512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM CAP 3300UF 50V ELECT SMG RAD 512 Kbit Serial I? Bus EEPROM 512 Kbit Serial IC Bus EEPROM 512 Kbit Serial I裁 Bus EEPROM 512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
SST30VR041 SST30VR041-150-C-U1 SST30VR041-500-C-WH |
4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo 4兆位光盘1兆位/ 256千位的SRAM ROM / RAM内存组合
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc. SST[Silicon Storage Technology, Inc]
|
M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER庐 SRAM 5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|