| PART |
Description |
Maker |
| AN473 |
A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL
|
SGS Thomson Microelectronics
|
| AN588 |
CHOOSING AN ITAXX REQUIRES A SYSTEM APPROACH
|
SGS Thomson Microelectronics
|
| AN817 |
A Discrete Approach to Battery Charging for Cellular Phones
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| PE42820 |
Peregrine Enables New Approach to RF Switching in High-Power Wireless Systems
|
Peregrine Semiconductor
|
| AN302 |
THYRISTORS AND TRIACS / AN IMPORTANT PARAMETER
|
ST Microelectronics
|
| EN25B40T-50QI EN25B40T-50VC EN25B40T-75QCP EN25B40 |
4 Mbit Serial Flash Memory with Boot and Parameter Sectors
|
Eon Silicon Solution Inc.
|
| EN25B20-50VC EN25B20-50VCP EN25B20-50VI EN25B20-50 |
2 Mbit Serial Flash Memory with Boot and Parameter Sectors
|
Eon Silicon Solution Inc.
|
| EN25B64 EN25B64T-100FI EN25B64T-100FIP EN25B64T-75 |
64 Megabit Serial Flash Memory with Boot and Parameter Sectors
|
Eon Silicon Solution Inc.
|
| EN25B32 EN25B32-100FC EN25B32-100FI EN25B32-100FIP |
32 Mbit Serial Flash Memory with Boot and Parameter Sectors
|
Eon Silicon Solution Inc.
|
| S25FL040A0LMFI000 S25FL040A0LMFI010 S25FL040A0LMAI |
4 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus and Small Sector for Boot and Parameter Storage 4M X 1 FLASH 3V PROM, PDSO8
|
Spansion, Inc.
SPANSION LLC
|
| KT837L15 KT837W15 KT837L55 KT837L51 KT837W51 KT837 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells . Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
|
Optek Technology
|
