| PART |
Description |
Maker |
| GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM
GSI Technology, Inc.
|
| GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44
256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM
RES, MTF 20K 1/4W 2%
ER 16C 16#16 SKT PLUG
ER 13C 3#8 3#12 7#16 SKT PLUG
10ns 256K X 16 4Mb Asynchronous SRAM
256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
N.A.
ETC
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| HY62VF08401C HY62VF08401C-SS55I |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
Super Low Power Slow SRAM - 4Mb
|
HYNIX SEMICONDUCTOR INC
|
| GS74116TP-15 GS74116TP-10 GS74116TP-10I GS74116TP- |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| GS74117AX-12 GS74117AX-8 GS74117AX-7I GS74117AX-10 |
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 8 ns, PBGA48
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 10 ns, PBGA48
|
SRAM
GSI Technology, Inc.
|
| N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04M1618L1AT-85I N04M1618L1A N04M1618L1AB N04M1618 |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C4096A AS7C4096A-20TIN AS7C4096A-10JC AS7C4096A |
SRAM - 5V Fast Asynchronous
5.0V 512K x 8 CMOS SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
High Speed CMOS Logic Quad Buffers with 3-State Outputs 14-PDIP -55 to 125 512K X 8 STANDARD SRAM, 12 ns, PDSO44
High Speed CMOS Logic Quad Buffers with 3-State Outputs 14-SOIC -55 to 125 512K X 8 STANDARD SRAM, 12 ns, PDSO44
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM
150MHz 10ns 128K x 32 4Mb sync burst SRAM
166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| M68AW511AL55MC1T M68AW511AL70NC1T M68AW511AM55MC1T |
4 Mbit (512K x8) 3.0V Asynchronous SRAM 4兆位（为512k × 8.0V异步SRAM
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
