| PART |
Description |
Maker |
| V53C16258HK60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
| V53C311816502K-60 V53C311816502K-60I V53C311816502 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
NEC, Corp.
|
| HY5116164BSLTC-60 HY5116164BJC-60 HY5116164BSLJC-8 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Omron Electronics, LLC
Infineon Technologies AG
|
| HY512264JC-70 HY512264JC-60 HY512264SLJC-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
DB Lectro, Inc.
|
| GM71V18160CJ-7 GM71V18160CT-6 |
x16 Fast Page Mode DRAM
|
|
| TMS44165L-80DGE TMS44165L-70DGE TMS44165L-10DGE TM |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
SCHURTER AG
|
| HM514260ALJ-6R HM51S4260ALJ-6R HM514260ALZ-6R HM51 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
3M Company
|
| UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
