| PART |
Description |
Maker |
| K7I643684M-FCI16 K7I641884M-FCI16 K7I641884M-FCI20 |
72Mb DDRII SRAM Specification
|
Samsung semiconductor
|
| GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM
JEDEC-standard pinout and package
Dual Double Data Rate interface
72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
| GS864436B-166I GS864472C-166 GS864418B-150I GS8644 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| K7I163682B06 K7I161882B |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| R1Q5A3636BBG-60R R1Q5A3618BBG-60R |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
http://
|
| R1QLA3636CBG R1QLA3618CBG |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| K7I163684B K7I161884B |
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| GS8662S36E-250 GS8662S36E-250I GS8662S08E-167I GS8 |
72Mb Burst of 2 DDR SigmaSIO-II SRAM
|
GSI[GSI Technology]
|
| UPD44324364F5-E50-EQ2 UPD44324084 UPD44324084F5-E3 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT
|
NEC[NEC]
|
