| PART |
Description |
Maker |
| MHVIC2115NR2 |
2170 MHz, 26 V, 23/34 dBm W??DMA RF LDMOS Wideband Integrated Power Amplifier
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| MHV5IC1810NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor
|
| MHV5IC1810NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MD8IC970NR1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MMRF2004NB MMRF2004NBR1 |
RF LDMOS Wideband Integrated Power Amplifier
|
NXP Semiconductors
|
| MHV5IC1810N MHV5IC1810N11 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| 55410 NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Laboratories
|
| PTMA080152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 ?1000 MHz
|
Infineon Technologies AG
|
| PTMA080302M |
Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 ?1000 MHz
|
Infineon Technologies AG
|
