| PART |
Description |
Maker |
| 82845GX 82845G 82845GL 82845GV 845GV 845G 845GL |
Intel 82845G/82845GL/82845GV Graphics and Memory Controller Hub (GMCH)
Graphic and Memory Controller Hub
|
INTEL[Intel Corporation]
|
| 1331 1332 1320G1BLACK 1327 1300 110G9 1377G1 1377G |
CONTACT 15A CRIMP/SOLDER
POWERPOLE HOUSING & CONT.BLK
POWERPOLE HOUSING RED
POWERPOLE HOUSING & CONT.BLUE
CONTACT 25A 90DEG PCB 0.7
CONTACT 25A VERTICAL PCB MTG
POWERPOLE HOUSING & CONT. RED
PLUG FREE LATCHED 6 WAY
CONTACT 25A 90DEG PCB 0.4 联系25A90度板0.4
CONTACT 30A CRIMP/SOLDER 联系30A条卷
POWERPOLE HOUSING & CONT. RED POWERPOLE房屋
LOCKING PIN POWERPACK 锁销强力
POWERPOLE HOUSING GREEN POWERPOLE房屋
|
3M Company
Anderson Power Products, Inc.
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| HYB18H256321BF-11/12/14 HYB18H256321BF-10 HYB18H25 |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.21 ns, PBGA136
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 256兆GDDR3显卡内存GDDR3显卡内存
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.22 ns, PBGA136
|
Qimonda AG
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| HYB18H256321BF-10 HYB18H256321BF-11 HYB18H256321BF |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
|
http://
Qimonda AG
|
| HYB18H1G321AF-10/11/14 |
GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM GDDR3显卡内存1千兆位GDDR3显卡内存
|
Qimonda AG
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
| HYB18H512321AF-20 HYB18H512321AF-12 |
16M X 32 SYNCHRONOUS GRAPHICS RAM, 0.35 ns, PBGA136 11 X 14 MM, GREEN, PLASTIC, MO-207IDR-Z, TFBGA-136
16M X 32 SYNCHRONOUS GRAPHICS RAM, 0.22 ns, PBGA136
|
Infineon Technologies AG
|
