| PART |
Description |
Maker |
| HL6724MG |
The HL6724MG is a 0.67 um band AlGaInP laser diode with a multi-quantum well (MQW) structure
From old datasheet system
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure.
|
HITACHI[Hitachi Semiconductor]
|
| NX5530SA NX5530SA-AZ |
1 550 nm Multiple Quantum Well (MQW) structured
|
California Eastern Labs
|
| STK14C88-M |
32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
Simtek
|
| EQ-430L |
EQ-430L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| LDM-0808-300M-91 |
CW Output Power: 300mW Typical 808 nm Emission Wavelength High-deeiciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| LDM-0980-300M-92 |
CW Output Power: 300 mW Typical 975 nm Emission Wavelength High-effciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
