| PART |
Description |
Maker |
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| HN7G01FU |
Multi Chip Discrete Device Power Management Switch Application Driver Circuit Application Interface Circuit Application
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
| AN1226 |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
|
SGS Thomson Microelectronics
|
| TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| SSM6E03TU |
Multi-chip discrete device (P-ch N-ch)
|
TOSHIBA
|
| HN2E05J |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| SYC130 NEC256 SHC130 SEC130 SGC130 SRC130 NEC250 S |
LED Displays
Optoelectronic
From old datasheet system
Intel® 82566MC Gigabit Ethernet PHY, Single Port, Pb-Free 2LI, FCBGA, Tray
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0659-0 05; No. of Positions: 18; Connector Type: Wire
(degrees C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Inch type screw; MIL-C-24308
C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Locking device with rectangular mating locking base; Through hole
C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Field-mounting locking device; PCB locking clip; MIL-C-24308
Optoelectronic 光电
|
IDEA
NEC
AME, Inc.
Sanken Electric Co., Ltd.
|
| HN4C05JU |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
