| PART |
Description |
Maker |
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AT52BR6408A AT52BR6408AT-85CI AT52BR6408A-70CI AT5 |
From old datasheet system
64-Mbit Flash, 8-Mbit SRAM (x16 I/O)
64 Mbit Multi-plane Flash combined with 8-Mbit SRAM
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| SST31LF021-300-4E-WH SST31LF021E-300-4E-WH SST31LF |
2 Mbit Flash 1 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32
2 Mbit Flash 1 Mbit SRAM ComboMemory 2 Mbit闪存1兆位的SRAM ComboMemory
|
Silicon Storage Technology, Inc.
|
| SST34HF1601-90-4C-LFP SST34HF1621-70-4C-LFP SST34H |
16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA56
16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory 16兆位并行快闪2 / 4兆位的SRAM ComboMemory
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| M68AR016DN70ZB1T M68AR016DN70ZB6T M68AR016DN70ZH1T |
1M X 16 STANDARD SRAM, 70 ns, PBGA48
16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM
16 Mbit 1M x16 1.8V Asynchronous SRAM
16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM
Circular Connector; No. of Contacts:15; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:28-17 RoHS Compliant: No
AB 7C 3#8 4#12 PIN RECP 1600万x16 1.8异步SRAM
ER 12C 12#16 SKT RECP LINE 1600万x16 1.8异步SRAM
AB 12C 12#16 SKT RECP 1600万x16 1.8异步SRAM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| CY7C1482V25-200BZI CY7C1482V25-200BZXI CY7C1482V25 |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM 1M X 72 CACHE SRAM, 3 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM 1M X 72 CACHE SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM 4M X 18 CACHE SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM 4M X 18 CACHE SRAM, 3 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM 4M X 18 CACHE SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS75V16F64GS16-7080DI 75V16F64GS16 |
64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
|
ISSI[Integrated Silicon Solution, Inc]
|
| SST34HF162G-70-4C-L3KE SST34HF164G-70-4E-LBK SST34 |
16 Mbit Dual-Bank Flash 2/4 Mbit SRAM ComboMemory
|
Silicon Storage Technology, Inc.
|
| CY7C1386F-167BGXC CY7C1386F-167BGXI CY7C1386F-200B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
