PART |
Description |
Maker |
AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组 x8 Page Mode DRAM Module x8页面模式内存模块 x8 Static Column Mode DRAM Module x8静态列模式DRAM模块 x8 DRAM ModuleUndefined Architecture x8内存,未定义建筑
|
Analog Devices, Inc. TOKO, Inc. Altera, Corp.
|
HB56C19A-8A HB56C19AT-8A HB56C19B-8A HB56C19AT-10A |
x(8 1) Static Column Mode DRAM Module × 1)静态列模式DRAM模块
|
Advanced Monolithic Systems, Inc. International Light Technologies, Inc. Cypress Semiconductor, Corp.
|
UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-8 |
256K (32K x 8) Static RAM 8K x 8 Static RAM RoboClock® High-speed Multi-phase PLL Clock Buffer x8 Fast Page Mode DRAM x8快速页面模式的DRAM
|
NEC TOKIN, Corp.
|
UPD4265400G7-A50 UPD4265400G7-A60 UPD4265400G7-A70 |
x4 Fast Page Mode DRAM x4快速页面模式的DRAM 128K x 8 Static RAM x4FastPageModeDRAM
|
|
LH21256Z-12 LH21256Z-15 LH21256-10 LH21256-12 LH21 |
x1 Page Mode DRAM x1 Nibble Mode DRAM x1半字节模式DRAM
|
Sharp Electronics, Corp. Rubycon, Corp.
|
GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C |
1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Electronic Theatre Controls, Inc. Rochester Electronics, LLC Integrated Silicon Solution, Inc.
|
MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式(3.3伏,4米4带扩展数据输出页模式动态随机存储器(刷k)的 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
TC514101AJ-70 TC514101AP-80 |
4M X 1 NIBBLE MODE DRAM, 70 ns, PDSO20 4M X 1 NIBBLE MODE DRAM, 80 ns, PDIP18
|
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