PART |
Description |
Maker |
IXFV110N25T IXFV110N25TS |
Trench Gate Power HiperFET
|
IXYS Corporation
|
CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
IXFT86N30T |
Trench HiperFET Power MOSFET
|
http://
|
IXFH20N60 IXFM20N60 IXFH15N60 IXFM15N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.35惟??娌??澧?己??HiPerFET???MOSFET)
|
IXYS[IXYS Corporation]
|
PSTG75HST12 |
Powerline N-Channel Trench Gate-IGBT Module
|
Powersem GmbH
|
IXFR80N15Q |
HiPerFET Power MOSFETs ISOPLUS247 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电2.5mΩ的N沟道增强型HiPerFET功率MOSFET)
|
IXYS Corporation
|
SFF35N20Z SFF35N20M |
55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET
|
SSDI[Solid States Devices, Inc]
|
IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts 128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
IXTP76N25T IXTH76N25T IXTI76N25T |
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
IXFH50N20 IXFH10N65 IXFH10N60 IXFH11N100 IXFH11N60 |
HIPERFET Power MOSFTETs 42 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HIPERFET Power MOSFTETs HIPERFET电力MOSFTETs RES, FILM, 1.33K, 1%, .100W, 100PPM, 0805
|
IXYS, Corp. http:// IXYS[IXYS Corporation]
|
CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|