| PART |
Description |
Maker |
| AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
|
Analog Devices, Inc.
TOKO, Inc.
Altera, Corp.
|
| AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存，未定义建筑
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
|
Lin Engineering, Inc.
Unisonic Technologies Co., Ltd.
Sullins Connector Solutions, Inc.
Cypress Semiconductor, Corp.
|
| HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AK491024GP-12 AK491024GK-12 AK491024GK-80 AK491024 |
x(8 1) Page Mode DRAM Module
× 1）静态列模式DRAM模块
× 1）页面模式内存模
x(8 1) Static Column Mode DRAM Module ×8 1）静态列模式DRAM模块
|
Molex, Inc.
|
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240
256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240
64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc.
XILINX INC
|
| HYM591000BM-70 HYM591000BM-60 HYM591000BLM-70 |
x(8 1) Fast Page Mode DRAM Module
|
|
| HB561003B-12 HB561003AR-20 HB561003B-20 HB561003B- |
x(8 1) Page Mode DRAM Module × 1）页面模式内存模
|
Omron Electronics, LLC
|
| MB8502E064AA-60L B8502E064AA-70 |
144-PIN SO DIMM 2 M×64 BITS
Hyper Page Mode Dram Module(CMOS 2 M×64 位超级页面存取模式动态RAM模块)
144-PIN SO DIMM 2 M?64 BITS Hyper Page Mode Dram Module(CMOS 2 M?64 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu Limited
|
| HB56C19A-8A HB56C19AT-8A HB56C19B-8A HB56C19AT-10A |
x(8 1) Static Column Mode DRAM Module × 1）静态列模式DRAM模块
|
Advanced Monolithic Systems, Inc.
International Light Technologies, Inc.
Cypress Semiconductor, Corp.
|
| MB85326 |
CMOS 4M x 36 Fast Page Mode DRAM Module
|
Fujitsu
|
| MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块)
CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块）
|
Fujitsu Limited
Fujitsu, Ltd.
|
