| PART |
Description |
Maker |
| 2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N60 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
|
Motorola
|
| MAC4DLM-001G |
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
|
ON Semiconductor
|
| 2N6073AG |
Sensitive Gate Triacs Silicon Bidirectional Thyristors 400 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225
|
ON Semiconductor
|
| MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
| BT138X BT138X-600D BT138X-600E BT138X-800E |
12 A four-quadrant triacs, sensitive gate
4Q Triac 4Q双向可控
|
NXP Semiconductors N.V.
|
| HTM4A60S |
INSULATED TYPE SENSITIVE GATE TRIAC (TO-126ML PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| HTU4A60S |
NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-251 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| T0809XH T0805XH T0805NH |
800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
SENSITIVE GATE TRIACS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2N6071ATG |
Sensitive Gate Triacs 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225
|
ON Semiconductor
|
| BT136-800E BT136-800E127 |
4Q Triac 4Q双向可控
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005
|
NXP Semiconductors N.V.
|
