| PART |
Description |
Maker |
| AM42DL1614DT45IT AM42DL1614DB45IT AM42DL1614DB35IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位2米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位256亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Surface Mount Resistors Thick Film Chip Resistors
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| DL161 DL163 DL164 AM42DL1644DB30IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
|
Advanced Micro Devices
|
| AM41PDS3224DT10IS AM41PDS3224DT100IS AM41PDS3224DT |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K6T2008S2A |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM
|
Samsung Semiconductor
|
| P87C51FB 80C32 80C51RA 83C51RB 83C51RC 83C51RA 83C |
80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless, low voltage 2.7V.5.5V, low power, high speed 33 MHz
|
Philips Semiconductors
|
| KM688100 |
1M x 8-Bit Low Power and Low Voltage CMOS Static RAM
|
Samsung Semiconductor
|
