| PART |
Description |
Maker |
| HL615 |
Available to be mounted on the PCB backside
|
KODENSHI KOREA CORP.
|
| IXSR35N120BD1 |
IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
|
IXYS Corporation
|
| IXFL34N100 |
HiPerFETTM Power MOSFETs ISOPLUS264(Electrically Isolated Backside)
|
IXYS Corporation
|
| HMS12864F8V HMS12864F8V-20 HMS12864F8V-12 HMS12864 |
SRAM MODULE 1MByte (128K x 64 bit), 120-Pin SMM, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HMS25632J2V-10 HMS25632J2V-12 HMS25632J2V-85 HMS25 |
SRAM MODULE 1Mbyte (256K x 32-Bit) 3.3V, 68-Pin JLCC Packaging
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| HMS12864F8VL-70 HMS12864F8VL-100 HMS12864F8VL |
SRAM MODULE 1MByte (128K x 64 bit), 120-Pin SMM, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| PC7410M16 PC7410M16VG400L |
PC7410 2MByte backside L2-cache Multi-Chip Package
RISC microprocessor. 16 Mbits: 256K x 72 SSRAM. Max internal processor speed 400 MHz. 1.8V -100mV.
|
Atmel
|
| IXFR4N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
|
IXYS
|
| MPX2301DT1 MPX2300DT1 |
MPX2300DT1 Chip Pak High Volume Pressure Sensor for Disposable, Backside Pressure Applications
High Volume Pressure Sensor For Disposable Applications
|
Motorola
|
